Growth and surface properties of lanthanum hexaboride crystals

Inoue, Toru; Nakada, Mitsuru; Uozumi, Takahiko; Sugata, Eizi

doi:doi:10.1116/1.571872

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Journal of Vacuum Science & Technology Archives 1964-1982 / Volume 21 / Issue 4

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J. Vac. Sci. Technol. 21, 952 (1982); doi:10.1116/1.571872 (5 pages)

Growth and surface properties of lanthanum hexaboride crystals

Toru Inoue, Mitsuru Nakada, Takahiko Uozumi, and Eizi Sugata

Faculty of Engineering, Osaka Electro‐Communication University, Neyagawa Osaka 572 Japan

Abstract

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Single crystal lanthanum hexaboride (LaB₆) has been grown in a tammann furnace. In the furnace and at 1500 K, lanthanum (La) and boron (B) are melted in proportion to the stoichiometry mass ratio in 30–45 kg/cm² argon atmosphere. When the diffusion time at 1500 K took less, the cubical crystal grew and when it took longer, the needlelike crystal grew. The crystal growing direction was 〈100〉 for both cases. From the etch‐pit observation, this crystal growth has been shown to be stratified along the direction 〈100〉 and therefore the periodic crystal growth has been certified. The height of remolded microprotrusion, which was formed on LaB₆ emitter apex, was about 30 Å and the curvature radius was between 10 and 20 Å. The brightness (B) of the electron beam emitted from this remolded tip was about 1×10¹¹ A ⋅ cm⁻² ⋅ sr. This was unstable, however, because of the random walk of La atoms on the tip. Variation of the work function of platelike LaB₆ tip takes a constant value beyond monolayer formation of O₂ and H₂ on the surface, respectively. Therefore, the LaB₆ emitter is stable even in low quality of vacuum (10⁻⁷–10⁻⁸ Torr). Pyramidlike etch pit has about 30° dip angle. The etching degree defined to be the ratio of x/h was between three and four.

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KEYWORDS and PACS

Keywords

crystal growth from melts, lanthanum borides, surface properties, work functions, oxygen, hydrogen, electron beams, diffusion, plates, electron emission, electron sources, etching, ion microscopy, electron microscopy, electron scanning

PACS

81.10.Fq

Growth from melts; zone melting and refining
61.72.Ff

Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.-d

Microscopy of surfaces, interfaces, and thin films
73.30.+y

Surface double layers, Schottky barriers, and work functions